ASL4063 GaN

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The ASL4063 GaN from Aelius Semiconductors is a RF Amplifier with Frequency 16 to 18 GHz, Gain 18 to 24 dB, Power Gain 18 dB, Small Signal Gain 24 dB, Saturated Power 40 dBm. Tags: Power Amplifier. More details for ASL4063 GaN can be seen below.

Product Specifications

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Product Details

  • Part Number
    ASL4063 GaN
  • Manufacturer
    Aelius Semiconductors
  • Description
    Power Amplifier from 16 to 18 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    EMC, Communication, Instrumentation
  • Industry Application
    Electronic Warfare
  • Frequency
    16 to 18 GHz
  • Gain
    18 to 24 dB
  • Power Gain
    18 dB
  • Small Signal Gain
    24 dB
  • Saturated Power
    40 dBm
  • Saturated Power
    10 W
  • Input Power
    33 dBm
  • Input Power
    1.99 W
  • PAE
    25%
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Duty Cycle
    10%
  • Sub-Category
    GaN Amplifier, Pulsed Amplifier
  • Return Loss
    8 to 9 dB
  • Input Return Loss
    8 dB
  • Output Return Loss
    9 dB
  • Supply Voltage
    28 V (Drain)
  • Current Consumption
    160 mA (Saturated)
  • Quiscent Current
    120 mA
  • Technology
    AlGaN/GaN HEMT
  • Dimensions
    4.65 x 2.1 x 0.1 mm
  • Operating Temperature
    -50 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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