The ARF1009Q5 from Altum RF is a GaN Power Amplifier that operates in the X-band from 9 to 11 GHz. It delivers a saturated output power of 10 W with a power gain of 30 dB and has a power-added efficiency (PAE) of 40% for CW/Pulsed operations. The amplifier requires a DC supply of 22 V and requires a bias current of 150 mA. It is available in a robust QFN package that measures 5 × 5 mm with ESD protection to simplify handling and assembly. The amplifier is built with the latest manufacturing techniques to optimize for reliability and quality control and is ideal for demanding phased array systems, telecommunications, and test and measurement applications.
