ADH8411S

RF Amplifier by Analog Devices (476 more products)

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The ADH8411S from Analog Devices is a GaAs pHEMT Low Noise Amplifier MMIC that operates from 0.01 to 10 GHz. It delivers a saturated output power of 20.5 dBm with a gain of 14 dB and has a noise figure of 2 dB. This LNA has an OIP3 of 33 dBm and a power-added efficiency of up to 34%. It can also function as a local oscillator (LO) driver for many Analog Devices’ balanced, in-phase/quadrature (I/Q), or image rejection mixers. The LNA supports aerospace applications and includes commercial space features like water diffusion lot traceability, burn-in, life test & deltas analysis, radiation lot acceptance test (RLAT), and total ionizing dose (TID). It requires a DC supply of 5 V and consumes 55 mA of current.

The ADH8411S is available in a 6-lead LFCSP package that measures 2 x 2 mm with internally matched inputs and outputs for SMT-based high-capacity microwave applications. It is ideal for LEO satellites and military communications applications.

Product Specifications

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Product Details

  • Part Number
    ADH8411S
  • Manufacturer
    Analog Devices
  • Description
    GaAs pHEMT Low Noise Amplifier MMIC from 0.01 to 10 GHz for Satellite/Military Applications

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Military, SATCOM
  • Frequency
    10 MHz to 10 GHz
  • Gain
    12.5 to 15.5 dB
  • Noise Figure
    1.8 dB
  • Grade
    Military, Commercial, Space
  • IP3
    34 dBm
  • Impedance
    50 Ohms
  • Input Return Loss
    15 to 25 dB
  • Output Return Loss
    17 to 18 dB
  • Supply Voltage
    2 to 6 V
  • Transistor Technology
    GaAs pHEMT
  • Package Type
    Surface Mount
  • Package
    6-lead LFCSP
  • Dimensions
    2 mm × 2 mm
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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