ADPA7006

RF Amplifier by Analog Devices (476 more products)

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ADPA7006 Image

The ADPA7006 from ADI is a GaAs pHEMT MMIC Power Amplifier that operates from 18 to 44 GHz with an integrated temperature-compensated on-chip power detector. In the lower band from 18 to 24 GHz, it provides a P1dB of 24 dBm with a gain of 21 dB and has an OIP3 of 34 dBm. In the upper band from 34 to 44 GHz, the amplifier provides a P1dB of 26 dBm with a gain of 22.5 dB and has an OIP3 of 26 dBm. It requires a supply of 5 VDC and consumes up to 800 mA of current. The RF inputs and outputs of the amplifier are internally matched and dc blocked for ease of integration into higher-level assemblies.

The ADPA7006 is available as a 16-terminal ceramic leadless chip that measures 6 x 6 mm. It is ideal for military, test instrumentation, and communications applications.

Product Specifications

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Product Details

  • Part Number
    ADPA7006
  • Manufacturer
    Analog Devices
  • Description
    GaAs pHEMT MMIC Power Amplifier from 18 to 44 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Communication
  • Industry Application
    Test & Measurement, Military
  • Frequency
    18 to 44 GHz
  • Gain
    20 to 23 dB
  • Gain Flatness
    +/- 1 dB
  • Noise Figure
    4.5 to 11 dB
  • Output Power
    26 dBm
  • Output Power
    0.4 W
  • P1dB
    26 dBm
  • P1dB
    0.4 W
  • Grade
    Commercial, Military
  • IP3
    39 dBm
  • IP3
    7.9 W
  • Saturated Power
    29 dBm
  • Saturated Power
    0.79 W
  • PAE
    8 to 14 Percent
  • Power Consumption
    3 to 5 W
  • Class
    Class 1B
  • Impedance
    50 Ohms
  • Input Return Loss
    12 to 18 dB
  • Output Return Loss
    15 dB
  • Supply Voltage
    4 to 5 V
  • Quiscent Current
    800 mA
  • Transistor Technology
    GaAs p-HEMT
  • Package Type
    Surface Mount
  • Dimensions
    6 x 6 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

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