HMC1114

RF Amplifier by Analog Devices (476 more products)

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The HMC1114 from Analog Devices is a GaN Power Amplifier that operates from 2.7 GHz to 3.8 GHz. It delivers an output power of up to 14 watts with a gain of more than 32 dB and has a power added efficiency of 54%. The device requires a supply voltage of 28 V while consuming 150 mA of current. It is available in a 32-lead, 5 mm x 5 mm package and is ideal for applications such as wireless infrastructure, radar, public mobile radio, and general-purpose amplification.

Product Specifications

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Product Details

  • Part Number
    HMC1114
  • Manufacturer
    Analog Devices
  • Description
    10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Wireless Infrastructure, Test & Measurement, Aerospace & Defense, Radar, Commercial
  • Frequency
    2.7 to 3.2 GHz
  • Gain
    29 to 35 dB
  • Power Gain
    25 to 29 dB
  • IP3
    44 dBm
  • IP3
    25.12 W
  • Saturated Power
    40.5 to 41.5 dBm
  • Saturated Power
    11.22 to 14.13 W
  • PAE
    53 to 54 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Input Return Loss
    14 to 25 dB
  • Output Return Loss
    9 to 11 dB
  • Supply Voltage
    28 V
  • Transistor Technology
    HEMT
  • Technology
    GaN
  • Package Type
    Surface Mount
  • Package
    32 ld LFCSP_CAV (5x5mm w/3.0mm EP)
  • Dimensions
    5 mm × 5 mm

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