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HMC1114PM5E

RF Amplifier by Analog Devices (476 more products)
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The HMC1114PM5E from Analog Devices is a RF Amplifier with Frequency 2.7 to 3.8 GHz, Power Gain 23.5 to 25.5 dB, Small Signal Gain 30 to 34.5 dB, Gain Flatness ±0.8 to 1 dB, Noise Figure 5 to 5.5 dB. Tags: Chip, Power Amplifier. More details for HMC1114PM5E can be seen below.

Product Specifications

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Product Details

  • Part Number
    HMC1114PM5E
  • Manufacturer
    Analog Devices
  • Description
    GaN Power Amplifier from 2.7 to 3.8 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    VSAT
  • Display Application
    Extended Battery Operation For Public Mobile Radios, Power Amplifier Stage For Wireless Infrastructures, Test And Measurement Equipment, Commercial And Military Radars, General-purpose Transmitter Amplification
  • Standards Supported
    Radio
  • Industry Application
    Test & Measurement, Broadcast, Military, Wireless Infrastructure, Commercial, Radar
  • Frequency
    2.7 to 3.8 GHz
  • Power Gain
    23.5 to 25.5 dB
  • Small Signal Gain
    30 to 34.5 dB
  • Gain Flatness
    ±0.8 to 1 dB
  • Noise Figure
    5 to 5.5 dB
  • Output Power
    41.5 to 42 dBm
  • Output Power
    14.12 to 15.84 W
  • Grade
    Commercial, Military
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Return Loss
    7.5 to 18 dB
  • Input Return Loss
    12 to 18 dB
  • Output Return Loss
    7.5 to 10 dB
  • Supply Voltage
    24 to 32 V
  • Current Consumption
    150 mA
  • Package Type
    Chip
  • Dimensions
    5 x 5 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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