The HMC8205 is a GaN Power Amplifier that operates from 0.3 to 6 GHz. It provides 45.5 dBm (35 W) of power with a gain of 20 dB and 38% power added efficiency (PAE). The HMC8205 combines DC feed/RF bias choke, DC blocking capacitors and driver stage on a single design. It is ideal for both pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification. The amplifier is available in a 10-lead ceramic leaded chip carrier (LDCC).
