CMPA2060035F1

RF Amplifier by MACOM (664 more products)

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The CMPA2060035F1 from MACOM is an MMIC Power Amplifier that operates from 2 to 6 GHz. It delivers 40 W of output power with more than 22 dB of power gain and power-added efficiency (PAE) of up to 52%. The amplifier is based on a two-stage GaN HEMT design which enables a wide bandwidth. GaN HEMT technology provides a higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity compared to silicon and GaAs. They also offer greater power density and wider bandwidths compared to Si and GaAs transistors.

The CMPA2060035F1 is available in a screw-down package that measures 0.5 x 0.5 inches and is suitable for use in civil and military pulsed radar amplifiers, test instrumentation, and electronic warfare jamming systems.

Product Specifications

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Product Details

  • Part Number
    CMPA2060035F1
  • Manufacturer
    MACOM
  • Description
    40 W GaN MMIC Power Amplifier from 2 to 6 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Test & Measurement, Electronic Warfare, Radar
  • Frequency
    2 to 6 GHz
  • Power Gain
    22.4 to 24.2 dB
  • Small Signal Gain
    27.5 to 32 dB
  • Output Power
    45.56 to 46.58 dBm
  • Output Power
    35.97 to 45.5 W
  • Grade
    Commercial, Military, Space
  • Saturated Power
    45.56 to 46.58 dBm
  • Saturated Power
    36 to 45.56 W
  • PAE
    30 to 52 %
  • Class
    Class 1B
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Return Loss
    -14 dB
  • Supply Voltage
    28 V
  • Current Consumption
    1 A
  • Transistor Technology
    HEMT
  • Technology
    GaN
  • Package Type
    Flanged
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

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