WS1A3940-V1

RF Amplifier by MACOM (663 more products)

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WS1A3940-V1 Image

The WS1A3940-V1 from MACOM is an Asymmetric Doherty Power Amplifier Module (PAM) that operates from 3.70 to 3.98 GHz. It has been designed using GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. It provides an output power of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The amplifier requires a supply voltage of 48 V and is available in an LGA package that measures 6 x 6 mm and is ideal for multi-standard cellular power amplifier applications.

Product Specifications

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Product Details

  • Part Number
    WS1A3940-V1
  • Manufacturer
    MACOM
  • Description
    10 W Asymmetric Doherty Power Amplifier from 3.70 to 3.98 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Display Application
    Multi-standard Cellular Power Amplifiers
  • Standards Supported
    4G/LTE, 5G
  • Industry Application
    Cellular
  • Frequency
    3.7 to 3.98 GHz
  • Gain
    13 dB
  • Grade
    Commercial
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    48 V
  • Technology
    GaN on SiC
  • Package Type
    Surface Mount
  • Package
    Plastic LGA
  • Dimensions
    6 x 6 mm
  • RoHS
    Yes
  • Note
    Efficiency: 52 %, P3dB: 60 W

Technical Documents