AB6.0012G4448AC

RF Amplifier by Elite RF (59 more products)

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The AB6.0012G4448AC from Elite RF is a Linear Power Amplifier that operates from 6 to 12 GHz. It delivers a saturated output power of 25 W with a small signal gain of 48 dB. This wideband amplifier is fabricated using GaN-on-SiC technology that offers high power density and low thermal resistance. It is equipped with thermal overload protection and over-voltage protection for high reliability. This amplifier also ensures high reverse isolation to further improve safety during operation. It can be operated at an altitude of up to 10,000 feet and has an operating temperature range from 0°C to +50°C. This power amplifier is available in a rackmount enclosure that measures 19 x 15 x 3.5 inches and has N-type (female) connectors. It is ideal for military and commercial applications.

Product Specifications

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Product Details

  • Part Number
    AB6.0012G4448AC
  • Manufacturer
    Elite RF
  • Description
    25 W GaN Linear Power Amplifier from 6 to 12 GHz for Military Applications

General Parameters

  • Type
    Power Amplifier
  • Configuration
    System
  • Industry Application
    Commercial, Military
  • Frequency
    6 to 12 GHz
  • Power Gain
    45 dB
  • Small Signal Gain
    48 dB
  • Gain Flatness
    +/- 3 dB
  • Noise Figure
    7 dB
  • P1dB
    10 W
  • Grade
    Commercial, Military
  • IP3
    46 dBm
  • Saturated Power
    25 W
  • Class
    AB
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Input VSWR
    2.0:1
  • Sub-Category
    SSPA, GaN Amplifier
  • Harmonics
    -20 dBc
  • Spurious
    -60 dBc
  • AC Voltage
    100 to 240 V
  • Technology
    GaN on SiC
  • Package Type
    Benchtop / Rackmount
  • Dimensions
    19 x 15 x 3.5 inches
  • Connectors
    N Type
  • Weight
    25 lbs
  • Cooling Options
    Forced air cooling
  • Operating Temperature
    0 to 50 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents