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MB2.06.0G505030

RF Amplifier by Elite RF (79 more products)
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The MB2.06.0G505030 from Elite RF is a RF Amplifier with Frequency 2 to 6 GHz, Gain 50 dB, Power Gain 50 to 51 dB, Gain Flatness ±1.3 to ±1.5 dB (Power Gain Flatness), Saturated Power 50 dBm. Tags: Power Amplifier. More details for MB2.06.0G505030 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MB2.06.0G505030
  • Manufacturer
    Elite RF
  • Description
    100 W Solid-State Power Amplifier Module from 2 to 6 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    Jamming, EMC, Broadband, Test & Measurement, Commercial
  • Industry Application
    Test & Measurement, Commercial
  • Frequency
    2 to 6 GHz
  • Gain
    50 dB
  • Power Gain
    50 to 51 dB
  • Gain Flatness
    ±1.3 to ±1.5 dB (Power Gain Flatness)
  • Grade
    Commercial
  • Saturated Power
    50 dBm
  • Saturated Power
    100 W
  • Input Power
    -2 to 2 dBm
  • Class
    AB
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • VSWR
    1.20:1
  • Sub-Category
    GaN Amplifier, SSPA
  • Return Loss
    -10 dB
  • Input Return Loss
    -10 dB
  • Harmonics
    -20 to -15 dBc
  • Spurious
    -70 dBc
  • Switching Time
    2 to 5 uS
  • Supply Voltage
    30 VDC
  • Current Consumption
    13.5 to 15.5 A
  • Quiscent Current
    5.5 A
  • Transistor Technology
    GaN
  • Dimensions
    200 x 160 x 25 mm (L x W x H)
  • Input Connector
    SMA - Female
  • Output Connector
    N Type - Female
  • Weight
    2.49 Kg
  • Cooling Options
    Heatsink
  • Operating Temperature
    -20 to 65 Degree C
  • Storage Temperature
    -45 to 85 Degree C

Technical Documents
View details on the manufacturer's website
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