ML.458.0G214415

RF Amplifier by Elite RF (79 more products)

Note : Your request will be directed to Elite RF.

ML.458.0G214415 Image

The ML.458.0G214415 from Elite RF is a Low Noise Amplifier that operates from 450 to 8000 MHz. It delivers 24 dBm of saturated CW output power, has a P1dB of 21 dBm, a gain of 44 dB and a noise figure of 1.5 dB. The device has an IP3 of 31 dBm at 4 GHz offset and harmonics of -20 dBc.

The ML.458.0G214415 uses advanced high-power density LDMOS and GaN semiconductor devices, which ensures high-performance, high efficiency, high gain, and wide dynamic range. This system is designed for CW/Digital/Pulse signals and general-purpose amplification. The amplifier is available in a module that measures 3.5 x 3.0 x 1.0 inches with SMA Coaxial Connectors.

Product Specifications

View similar products

Product Details

  • Part Number
    ML.458.0G214415
  • Manufacturer
    Elite RF
  • Description
    Solid State Wideband Power Amplifier from 450 to 8000 MHz

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    Module with Connector
  • Frequency
    450 MHz to 8 GHz
  • Small Signal Gain
    44 dB
  • Gain Flatness
    +/- 2 dB
  • Noise Figure
    1.5 dB
  • Output Power
    21 to 24 dBm
  • Output Power
    0.13 to 0.25 W
  • P1dB
    21 dBm
  • P1dB
    0.12 W
  • IP3
    31 dBm
  • Saturated Power
    24 dBm
  • Saturated Power
    0.25 W
  • Class
    AB
  • Pulsed/CW
    CW/Pulsed
  • VSWR
    2:1
  • Sub-Category
    Linear Amplifier, SSPA, GaN Amplifier
  • Harmonics
    -20 dBc
  • Spurious
    -60 dBc
  • Supply Voltage
    15 V
  • Current Consumption
    200 mA
  • Transistor Technology
    LDMOS, GaN
  • Dimensions
    3.5 x 3.0 x 1.0 Inches
  • Connectors
    SMA
  • Weight
    1 lbs
  • Cooling Options
    Convection
  • Operating Temperature
    -20 to 60 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents