The MMB.502.5G504850 from Elite RF is a GaN Power Amplifier that operates from 0.5 to 2.5 GHz. It delivers a saturated output power of 100 W with a small signal gain of 48 dB. This class AB amplifier is designed for CW signals and is fabricated on a GaN-on-SiC process. It offers high power density, low thermal resistance, and wideband performance along with protection from thermal overload, over-voltage, and reverse polarity. The power amplifier has spurious levels of -60 dBc and harmonics of -20 dBc. It requires a DC supply voltage of 50 V and consumes 6 A of current. This amplifier is available in a module that measures 4 x 3 x 1.5 inches and has SMA connectors. It is suitable for military and commercial applications.
