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ENGDA00139

RF Amplifier by ENGIN-IC (53 more products)
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The ENGDA00139 from ENGIN-IC is a RF Amplifier with Frequency 2 to 18 GHz, Gain 8 to 10 dB, P1dB 35 to 37 dBm, P1dB 3.1 to 5.01 W, Saturated Power 38 to 40 dBm. Tags: Chip, Power Amplifier. More details for ENGDA00139 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ENGDA00139
  • Manufacturer
    ENGIN-IC
  • Description
    10 W, Wideband GaN Distributed Amplifier from 2 to 18 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    Electronic Warfare, Military, Telecom Infrastructure, Test & Measurement, Signals Intelligence (SIGINT) and Electronic Intelligence (ELINT), Transmitters, Receivers
  • Industry Application
    Military, Space, Test & Measurement
  • Frequency
    2 to 18 GHz
  • Gain
    8 to 10 dB
  • P1dB
    35 to 37 dBm
  • P1dB
    3.1 to 5.01 W
  • Grade
    Military, Space
  • Saturated Power
    38 to 40 dBm
  • Saturated Power
    6.31 to 10 W
  • Input Power
    35 dBm
  • PAE
    30%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Distributed Amplifier, GaN Amplifier
  • Return Loss
    10 to 14 dB
  • Input Return Loss
    10 to 14 dB
  • Output Return Loss
    10 to 14 dB
  • Supply Voltage
    18 to 30 V
  • Current Consumption
    1200 to 1600 mA
  • Package Type
    Chip
  • Dimensions
    3.94 x 2.44x 0.075 mm
  • Operating Temperature
    -55 to 100 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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