GRF5112

RF Amplifier by Guerrilla RF (113 more products)

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The GRF5112 from GuerillaRF is a High Linearity Power Amplifier that operates from 30 to 2700 MHz. It has a P1dB of 32.5 dBm with a small signal gain of 17.1 dB and output IP3 40 dBm (~10 W). This amplifier is based on a GaAs pHEMT process and provides excellent P1dB, ACLR, and OIP3 performance. The high linearity of this amplifier makes it an ideal choice for transmitter applications that typically do not employ digital pre-distortion correction schemes. It requires an input voltage of 5 V and consumes 230 mA of quiescent current.

This amplifier is available in QFN-16 package that measures 3.0 x 3.0 x 0.85 mm and is extremely resilient to mismatched loads. It is ideal for cellular boosters, automotive compensators, picocells/femtocells, and customer premise equipment applications.

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Product Specifications

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Product Details

  • Part Number
    GRF5112
  • Manufacturer
    Guerrilla RF
  • Description
    High Linearity GaAs pHEMT Power Amplifier from 30 to 2700 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Automotive, Boosters/Repeaters, Picocells/Femtocells
  • Display Application
    Automotive Compensators, Customer Premise Equipment
  • Industry Application
    Cellular
  • Frequency
    100 to 2700 MHz
  • Small Signal Gain
    17.5 dB
  • Noise Figure
    1.55 dB
  • Output Power
    0.125 W
  • Output Power
    21 dBm
  • P1dB
    1.58 W
  • P1dB
    32 dBm
  • Grade
    Commercial
  • IP3
    41 dBm
  • IP3
    12.58 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Reverse Isolation
    23 dB
  • Rise Time
    500 ns
  • Fall Time
    500 ns
  • Input Return Loss
    11 dB
  • Output Return Loss
    7 dB
  • Supply Voltage
    1.8 to 5.5 V
  • Current Consumption
    300 mA
  • Quiscent Current
    230 mA
  • Transistor Technology
    GaAs pHEMT
  • Package Type
    Surface Mount
  • Package
    QFN-16
  • Dimensions
    3 x 3 x 0.89 mm
  • Operating Temperature
    -40 to 105 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    ACLR:45 dBc

Technical Documents