GRF5510

RF Amplifier by Guerrilla RF (113 more products)

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GRF5510 Image

The GRF5510 from Guerrilla RF is a Two-Stage InGaP HBT Power Amplifier that operates from 0.88 to 0.96 GHz. It delivers an output power of +24 dBm with a small signal gain of over 29.2 dB. The amplifier requires a DC supply of 5 V and consumes up to 190 mA of current. It has an ACLR of more than 45 dBc and excellent IM3 performance. The rugged design of the amplifier makes it extremely resilient to mismatched loads.

The GRF5510 is available in a compact QFN-16 package that measures 3 x 3 mm, and the exceptional native linearity makes it an ideal choice for transmitter applications that typically do not employ digital predistortion correction schemes. It is suitable for applications such as cellular boosters/repeaters, automotive compensators, picocells/femtocells, cellular DAS, customer premise equipment, and wireless infrastructure.

Product Specifications

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Product Details

  • Part Number
    GRF5510
  • Manufacturer
    Guerrilla RF
  • Description
    High Linearity Wireless Infrastructure Power Amplifier from 0.88 to 0.96 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Picocells/Femtocells, Picocells/Femtocells, Automotive, DAS, WiFi
  • Standards Supported
    5G, WiFi
  • Industry Application
    Cellular, MIlitary
  • Frequency
    880 to 960 MHz
  • Gain
    27 dB
  • Noise Figure
    4.5 dB
  • Output Power
    32 dBm
  • Output Power
    1.58 W
  • P1dB
    32 dBm
  • P1dB
    1.585 W
  • IP3
    51 dBm
  • IP3
    125.893 W
  • Input Power
    10 dBm
  • Input Power
    0.01 W
  • Pulsed/CW
    CW
  • Rise Time
    500 ns
  • Fall Time
    2800 ns
  • Supply Voltage
    5 V
  • Current Consumption
    210 mA
  • Transistor Technology
    InGaP HBT
  • Package Type
    Surface Mount
  • Package
    3.0 QFN-16
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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