GRF5517

RF Amplifier by Guerrilla RF (114 more products)

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GRF5517 Image

The GRF5517 from Guerrilla RF is a Two-Stage InGaP HBT Power Amplifier that operates from 1.71 to 1.9 GHz. It delivers an output power of +23 dBm with a small signal gain of over 27.5 dB. The amplifier requires a DC supply of 5 V and consumes less than 225 mA of current. It provides an excellent IM3 performance, and the rugged design makes it extremely resilient to mismatched loads. The GRF5517 is available in a compact QFN-16 package that measures 3 x 3 mm, and the exceptional native linearity makes it an ideal choice for transmitter applications that typically do not employ digital predistortion correction schemes. It is suitable for applications such as cellular boosters, automotive compensators, picocells/femtocells, and customer premise equipment.

Product Specifications

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Product Details

  • Part Number
    GRF5517
  • Manufacturer
    Guerrilla RF
  • Description
    High Linearity InGaP Power Amplifier from 1.71 to 1.9 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Picocells/Femtocells, Picocells/Femtocells, Automotive, DAS, WiFi
  • Standards Supported
    5G, WiFi
  • Industry Application
    Cellular, MIlitary
  • Frequency
    1.71 to 1.9 GHz
  • Small Signal Gain
    27.5 dB
  • Noise Figure
    5.4 dB
  • Output Power
    32 dBm
  • Output Power
    1.58 W
  • P1dB
    32 dBm
  • P1dB
    1.585 W
  • IP3
    48 dBm
  • IP3
    63.0957 W
  • Input Power
    23 dBm
  • Input Power
    0.19 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Reverse Isolation
    > 50 dB
  • Rise Time
    500 ns
  • Fall Time
    2800 ns
  • Input Return Loss
    7 dB
  • Output Return Loss
    10 dB
  • Supply Voltage
    5 V
  • Current Consumption
    225 mA
  • Quiscent Current
    225 mA
  • Transistor Technology
    InGaP HBT
  • Package Type
    Surface Mount
  • Package
    3.0 QFN-16
  • Dimensions
    3 x 3 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents