GRF5526

RF Amplifier by Guerrilla RF (113 more products)

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GRF5526 Image

The GRF5526 from Guerrilla RF is an RF Power Amplifier that operates from 2.5 to 2.7 GHz. It provides 30 dB of gain with a noise figure of 3.3 dB and a P1dB of 32.2 dBm. This two-stage InGaP HBT PA has exceptional native linearity, which makes it an ideal choice for transmitter applications that typically do not employ digital pre distortion correction schemes. This amplifier has been specifically designed for 5G wireless infrastructure applications requiring exceptional native linearity over large 100 MHz bandwidths and temperature extremes of -40°C to 85°C. 

The amplifier can maintain ACLR levels of better than -45dBc, IMD3 levels < -20dBm, EVM levels < 1.5%, and PAE Efficiencies in the 14% range without the aid of supplemental linearization schemes like digital pre-distortion (DPD). It requires a DC supply of 5 V and draws 153 mA of current. This PA is available in a surface mount QFN-16 Package that measures 3 x 3 mm. It is ideal for cellular boosters/repeaters, picocells, femtocells, customer premise equipment, automotive compensators, cellular DAS, and wireless infrastructure applications.

Product Specifications

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Product Details

  • Part Number
    GRF5526
  • Manufacturer
    Guerrilla RF
  • Description
    0.25 W Linear Power Amplifiers without DPD for 5G Applications from 2.5 to 2.7 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Automotive, Boosters/Repeaters, DAS, Picocells/Femtocells
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    2.5 to 2.7 GHz
  • Gain
    30 dB
  • Small Signal Gain
    30 dB
  • Noise Figure
    3.3 dB
  • Output Power
    32.2 dBm
  • Output Power
    1.66 W
  • P1dB
    32.2 dBm
  • P1dB
    1.65 W
  • Grade
    Commercial
  • IP3
    45 dBm
  • IP3
    31.62 W
  • Linear Power
    23 dBm (Linear Output Power)
  • Linear Power
    0.2 W
  • Input Power
    23 dBm
  • Input Power
    0.2 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Reverse Isolation
    > 42 dB
  • Rise Time
    500 ns
  • Fall Time
    2800 ns
  • Input Return Loss
    > 16 dB
  • Output Return Loss
    > 6 dB
  • Supply Voltage
    3 to 5.5 V
  • Current Consumption
    250 mA
  • Quiscent Current
    150 mA
  • Transistor Technology
    InGaP HBT
  • Package Type
    Surface Mount
  • Package
    QFN-16 Package
  • Dimensions
    3 x 3 x 0.85 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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