GRF5536

RF Amplifier by Guerrilla RF (113 more products)

Note : Your request will be directed to Guerrilla RF.

GRF5536 Image

The GRF5536 from Guerrilla RF is a Two-Stage InGaP HBT Power Amplifier that operates from 3.3 to 4.2 GHz. It delivers a linear output power of +23 dBm (up to 85°C) with a gain of 27 dB. This amplifier is designed to deliver excellent P1dB, ACLR, and IM3 performance and has exceptional native linearity for transmitter applications that do not employ digital pre-distortion correction schemes. It requires a DC supply of 5 V and consumes 195 mA of current. The amplifier has flexible biasing that provides latitude for linearity optimization and also has a digital shutdown feature. It is available in a QFN-16 package that measures 3 x 3 mm and is ideal for cellular boosters/repeaters, automotive compensators, picocells/femtocells, cellular DAS, customer premise equipment, and wireless infrastructure applications.

Product Specifications

View similar products

Product Details

  • Part Number
    GRF5536
  • Manufacturer
    Guerrilla RF
  • Description
    High-Linearity InGaP HBT Power Amplifier from 3.3 to 4.2 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Boosters/Repeaters, Automotive, DAS, Picocells/Femtocells
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    3.3 to 4.2 GHz
  • Gain
    27.3 dB
  • Small Signal Gain
    27.3 dB
  • Noise Figure
    4.1 dB
  • Output Power
    32 dBm
  • Output Power
    1.58 W
  • P1dB
    32 dBm
  • P1dB
    1.585 W
  • Grade
    Commercial
  • IP3
    44.7 dBm
  • IP3
    29.5 W
  • Linear Power
    23 dBm (Linear Output Power)
  • Linear Power
    0.2 W
  • Input Power
    23 dBm
  • Input Power
    0.2 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Reverse Isolation
    > 37 dB
  • Rise Time
    500 ns
  • Fall Time
    2800 ns
  • Input Return Loss
    > 9 dB
  • Output Return Loss
    > 6 dB
  • Supply Voltage
    3 to 5.5 V
  • Current Consumption
    280 mA
  • Quiscent Current
    195 mA
  • Transistor Technology
    InGaP HBT
  • Package Type
    Chip
  • Package
    QFN-16 Package
  • Dimensions
    3 x 3 x 0.85 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents