GRF5606

RF Amplifier by Guerrilla RF (114 more products)

Note : Your request will be directed to Guerrilla RF.

GRF5606 Image

The GRF5606 from Guerrilla RF is a Two-Stage InGaP HBT Power Amplifier that operates from 663 to 716 MHz. It delivers an output P1dB of 3.6 W (~35.6 dBm) with a small signal gain of 27.5 dB. The amplifier exhibits exceptionally native linearity, making it ideal for transmitter applications that typically do not employ digital pre-distortion correction schemes. This power amplifier has a rugged design that offers resilience to mismatched loads. It requires a DC supply of 5 V, consumes 240 mA of current, and provides flexible biasing for linearity optimization. This RoHS-compliant amplifier is available in a 16-lead QFN package that measures 3 x 3 mm and is ideal for cellular boosters, automotive compensators, picocells/femtocells, and customer-premise equipment applications.

Product Specifications

View similar products

Product Details

  • Part Number
    GRF5606
  • Manufacturer
    Guerrilla RF
  • Description
    3.6 W InGaP HBT Power Amplifier from 663 to 716 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Picocells/Femtocells
  • Industry Application
    Cellular
  • Frequency
    663 to 716 MHz
  • Gain
    27.5 dB
  • Small Signal Gain
    27.5 dB
  • Noise Figure
    4.2 dB
  • P1dB
    35.6 dBm
  • P1dB
    3.63 W
  • IP3
    54.7 dBm
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Reverse Isolation
    59 dB
  • Rise Time
    500 ns
  • Fall Time
    500 ns
  • Supply Voltage
    5 V
  • Transistor Technology
    InGaP
  • Package Type
    Surface Mount
  • Package
    QFN-16
  • Dimensions
    3 x 3 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents