BAL-WPA

RF Amplifier by HRL Laboratories (3 more products)

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The BAL-WPA from HRL Laboratories is a 4-Stage Power Amplifier that operates from 70 to 105 GHz. Fabricated using HRL's T-gate GaN HEMT process (GaN-on-SiC), this balanced amplifier provides an output power of 20 dBm with a gain of 15 dB, and has a PAE of 5%. It operates over a supply voltage of 12 V and consumes up to 90 mA of current. The amplifier is available in a chip that measures 2.23 x 2.18 x 0.05 mm and is ideal for use in W-band high data rate wireless links, sensors and radars applications.

Product Specifications

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Product Details

  • Part Number
    BAL-WPA
  • Manufacturer
    HRL Laboratories
  • Description
    4-Stage Balanced GaN Power Amplifier from 70 to 105 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Standards Supported
    W Band
  • Industry Application
    Commercial, Aerospace & Defense
  • Frequency
    70 to 105 GHz
  • Gain
    15 to 18 dB
  • Output Power
    23 dBm
  • Output Power
    0.2 W
  • Saturated Power
    23 dBm
  • Saturated Power
    0.2 W
  • PAE
    5 %
  • Sub-Category
    GaN Amplifier
  • Return Loss
    20 dB
  • Supply Voltage
    12 V
  • Current Consumption
    90 mA
  • Transistor Technology
    GaN, HEMT
  • Dimensions
    2.23 x 2.18 x 0.05 mm

Technical Documents