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BGA855N6

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The BGA855N6 from Infineon Technologies is a RF Amplifier with Frequency 1.164 to 1.3 GHz, Power Gain 16.6 to 18.6 dB, Noise Figure 0.6 to 1.1 dB, IP3 1 dBm, IP3 0.001 W. Tags: Surface Mount, Low Noise Amplifier. More details for BGA855N6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BGA855N6
  • Manufacturer
    Infineon Technologies
  • Description
    1164 to 1300 MHz, SiGe Low Noise Amplifier for GNSS Applications

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    Galileo, GLONASS, 4G/LTE, 5G
  • Industry Application
    GPS/GNSS
  • Frequency
    1.164 to 1.3 GHz
  • Power Gain
    16.6 to 18.6 dB
  • Noise Figure
    0.6 to 1.1 dB
  • Grade
    Commercial, Space
  • IP3
    1 dBm
  • IP3
    0.001 W
  • Input Power
    25 dBm
  • Input Power
    0.316 W
  • Power Dissipation
    60 mW
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Reverse Isolation
    19 to 22 dB
  • Return Loss
    8 to 20 dB
  • Input Return Loss
    8 to 11 dB
  • Output Return Loss
    12 to 20 dB
  • Supply Voltage
    1.1 to 3.3 V
  • Current Consumption
    0.2 uA to 5.4 mA
  • Technology
    SiGe
  • Package Type
    Surface Mount
  • Package
    TSNP-6-10
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    Input P1dB: -18 to -14 dBm

Technical Documents
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