The BGA9H1MN9 from Infineon Technologies is a Low Noise Amplifier designed for LTE and 5G applications from 1.4 to 2.7 GHz. It provides 20.2 dB of gain, has a noise figure of 0.6 dB, and has high EMI robustness. The LNA features gain steps that allow the gain and linearity to be adjusted to enhance the system dynamic range and accommodate varying interference scenarios. It has a MIPI RFFE interface that provides comprehensive control over multiple gain steps and bias modes.
The BGA9H1MN9 requires a DC supply from 1.1 to 2 V and consumes 5.8 mA of current. It further supports ultra-low bypass current of 2 µA to reduce power consumption. The amplifier is available in a compact 9-pin TSNP-9 package that measures 1.1 x 1.1 mm. It is RoHS and WEEE compliant and is ideal for use in LTE devices or 5G smartphones.
