The CGY2631UH from MACOM is a GaN Power Amplifier that operates from 6 to 18 GHz. It delivers a saturated output power of 2 W (~40 dBm) with a gain of 20 dB and has a PAE of 36%. This amplifier is manufactured using MACOM’s high-performance 100 nm gate length GaN-on-Si HEMT power technology which is being evaluated for space applications. It uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability. The amplifier requires a DC supply of 12 V and consumes less than 2 A of current. It is available as a die that measures 4.22 x 3.11 mm and is suitable for use in radar, electronic warfare, and telecommunication applications.
