CMPA0060025F

RF Amplifier by MACOM (663 more products)

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The CMPA0060025F from MACOM is a GaN HEMT based Power Amplifier MMIC that operates from DC to 6000 MHz. It delivers a saturated output power of 25 W with a gain of more than 15.5 dB and has an efficiency of up to 63%. The amplifier is based on GaN technology which offers higher breakdown voltage, thermal conductivity, power density and a wider bandwidth as compared to Si and GaAs transistors. It is available as a flanged package that measures 0.5 x 0.5 inches and is suitable for applications such as ultra-broadband amplifiers, test instrumentation, and EMC amplifier drivers.

Product Specifications

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Product Details

  • Part Number
    CMPA0060025F
  • Manufacturer
    MACOM
  • Description
    25 W GaN MMIC Power Amplifier from DC to 6000 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Broadband, Test & Measurement
  • Industry Application
    Test & Measurement, Test & Measurement
  • Frequency
    DC to 6 GHz
  • Power Gain
    10.7 to 12.8 dB
  • Small Signal Gain
    17 dB
  • Output Power
    42.7 to 44.8 dBm
  • Output Power
    18.62 to 30.2 W
  • Saturated Power
    42.7 to 44.8 dBm
  • Saturated Power
    30.2 W
  • Input Power
    32 dBm
  • Input Power
    1.58 W
  • Impedance
    50 Ohms
  • VSWR
    5.00:1
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    50 V
  • Current Consumption
    500 mA
  • Transistor Technology
    GaN HEMT
  • Package Type
    Flanged
  • Dimensions
    0.5 x 0.5 in
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents