CMPA0060025F1

RF Amplifier by MACOM (664 more products)

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The CMPA0060025F1 from MACOM is a GaN MMIC Power Amplifier that operates from 20 MHz to 6 GHz. The amplifier delivers up to 25W of saturated output power with a small signal gain of 17 dB and a Power Added Efficiency of better than 20%.  It requires a DC Supply of 50V for operation. The amplifier is fabricated with a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

The amplifier requires bias from appropriate Bias-T’s, through the RF input and output ports which are internally matched to 50 ohms. The Bias-T’s were included in the calibration of the test system and all other losses associated with the test fixture are included in the measurements. The amplifier is ideal for Test Instruments and EMC Amplifier Driver Applications.

Product Specifications

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Product Details

  • Part Number
    CMPA0060025F1
  • Manufacturer
    MACOM
  • Description
    25 W GaN MMIC Power Amplifier from 20 MHz to 6 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Test & Measurement
  • Industry Application
    Test & Measurement, Test & Measurement, Broadcast
  • Frequency
    DC to 6 GHz
  • Gain
    15.5 to 21.4 dB
  • Small Signal Gain
    17 dB
  • Output Power
    43.97 dBm
  • Output Power
    24.95 W
  • Saturated Power
    43.97 dBm
  • Saturated Power
    25 W
  • Input Power
    32 dBm
  • Input Power
    1.5 W
  • PAE
    26% to 63%
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    50 to 84 V
  • Current Consumption
    500 mA
  • Transistor Technology
    GaN on SiC
  • Technology
    HEMT
  • Package Type
    Surface Mount
  • Dimensions
    0.5 x 0.5 inches
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -60 to 150 Degree C

Technical Documents