CMPA2060035F

RF Amplifier by MACOM (663 more products)

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The CMPA2060035F from MACOM is a GaN MMIC Power amplifier that operates from 2 to 6 GHz. It provides a saturated output power of 35 W with a gain of 28 dB and drain efficiency of 35%. The HEMT-based amplifier requires a supply voltage of 32 volts and is ideal for Ultra-broadband Amplifiers, Fiber Drivers, Test Instrumentation, and EMC Amplifier Drivers applications.

This MMIC contains a two-stage reactively matched amplifier, enabling very wide bandwidths to be achieved in a small-footprint, screw-down package featuring a copper-tungsten heat sink.

Product Specifications

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Product Details

  • Part Number
    CMPA2060035F
  • Manufacturer
    MACOM
  • Description
    35 W GaN MMIC Power Amplifier from 2 to 6 GHz

General Parameters

  • Type
    Power Amplifier, Driver Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Test & Measurement, Test & Measurement
  • Frequency
    2 to 6 GHz
  • Power Gain
    17.4 to 20.3 dB
  • Small Signal Gain
    25.6 to 28.5 dB
  • Output Power
    45.44 dBm
  • Output Power
    34.99 W
  • Saturated Power
    45.44 dBm
  • Saturated Power
    35 W
  • PAE
    33 to 47.2 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Return Loss
    10.7 to 12.5 dB
  • Input Return Loss
    10.7 dB
  • Output Return Loss
    12.5 dB
  • Supply Voltage
    32 V
  • Transistor Technology
    HEMT
  • Technology
    GaN
  • Package Type
    Flanged
  • Operating Temperature
    225 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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