CMPA2735015S

RF Amplifier by MACOM (663 more products)

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The CMPA2735015S from MACOM is a GaN HEMT MMIC Power Amplifier that operates from 2.7 to 3.5 GHz. This GaN HEMT has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. It provides up to 25 watts of saturated power with a small signal gain of 35 dB and a power gain of 27.2 dB. The amplifier has a PAE of 56%. This MMIC contains a two-stage reactively matched amplifier design approach enabling high power and power added efficiency to be achieved in a 5mm x 5mm, surface mount (QFN package).

Product Specifications

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Product Details

  • Part Number
    CMPA2735015S
  • Manufacturer
    MACOM
  • Description
    GaN MMIC Power Amplifier from 2.7 to 3.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Radar, Aerospace & Defense
  • Frequency
    2.7 to 3.5 GHz
  • Power Gain
    27.3 to 27.9 dB
  • Small Signal Gain
    33 to 35 dB
  • Output Power
    43.22 to 43.98 dBm
  • Output Power
    20.99 to 25 W
  • Saturated Power
    43.22 to 43.98 dBm
  • Saturated Power
    21 to 25 W
  • Peak Power
    15 W
  • PAE
    48 to 56%
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Pulse Width
    500 µS
  • VSWR
    5.00:1
  • Input VSWR
    5.00:1
  • Output VSWR
    5.00:1
  • Input Return Loss
    -8 dB
  • Output Return Loss
    -7 dB
  • Supply Voltage
    50 V
  • Transistor Technology
    HEMT
  • Technology
    GaN
  • Package Type
    Surface Mount
  • Package
    QFN
  • Dimensions
    5 mm x 5 mm
  • Storage Temperature
    -65 to 150 Degree C

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