CMPA5259025S

RF Amplifier by MACOM (663 more products)

Note : Your request will be directed to MACOM.

CMPA5259025S Image

The CMPA5259025S from MACOM is a GaN HEMT-based MMIC Power Amplifier that operates from 5.2 to 5.9 GHz. It delivers an output power of 40 W with a gain of 25 dB and has a power added efficiency (PAE) of more than 53%. This MMIC has a two-stage reactively matched amplifier design which enables wide bandwidths to be achieved in a small footprint while maintaining high gain and efficiency. It requires a DC supply of 28 V and consumes 250 mA of current.

The amplifier is designed primarily for use as an output stage for highly integrated AESA radar type architectures. In addition, the high gain makes it suitable as a drive stage for a multi-device line-up using the MACOM high power IMFETs as the final stage. The CMPA5259025S is available in a QFN package that measures 5 x 5 mm and is ideal for civil and military pulsed, and radar amplifier, aerospace, and defense applications.

Product Specifications

View similar products

Product Details

  • Part Number
    CMPA5259025S
  • Manufacturer
    MACOM
  • Description
    40 W GaN MMIC Power Amplifier from 5.2 to 5.9 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Aerospace & Defense, Radar
  • Frequency
    5 to 6 GHz
  • Power Gain
    25 to 25.2 dB
  • Small Signal Gain
    29.4 to 30 dB
  • Output Power
    46.02 dBm
  • Output Power
    39.99 W
  • Grade
    Commercial, Military
  • Saturated Power
    46.02 dBm
  • Saturated Power
    40 W
  • PAE
    53 to 54 %
  • Duty Cycle
    20 %
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    28 V
  • Current Consumption
    250 mA
  • Transistor Technology
    GaN HEMT
  • Package Type
    Surface Mount
  • Package
    QFN
  • Dimensions
    5 x 5 mm
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

Technical Documents