CMPA801B030F1

RF Amplifier by MACOM (663 more products)

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The CMPA801B030F1 from MACOM is a GaN MMIC Power Amplifier that operates from 8 to 12 GHz. It delivers a saturated output power of 35 W with a large signal gain of 19 dB and has a PAE of 44%. The amplifier is designed using a 0.15um GaN on SiC process that has excellent thermal characteristics that allow for simplified system cooling requirements. It requires a DC supply of 28 V and is available in a bolt-down, flange package. The amplifier is ideal for civil and military radar applications.

Product Specifications

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Product Details

  • Part Number
    CMPA801B030F1
  • Manufacturer
    MACOM
  • Description
    35 W GaN MMIC Power Amplifier from 8 to 12 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Radar, Military
  • Frequency
    8 to 12 GHz
  • Power Gain
    19 to 20.1 dB
  • Small Signal Gain
    25 to 28 dB
  • Output Power
    45 to 46.1 dBm
  • Output Power
    31.62 to 40.74 W
  • Grade
    Commercial, Military
  • Saturated Power
    45 to 46.1 dBm
  • Saturated Power
    31.62 to 40.73 W
  • PAE
    36 to 44 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 us
  • Duty Cycle
    10 %
  • VSWR
    5:1
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    10 dB
  • Output Return Loss
    7 dB
  • Supply Voltage
    28 V
  • Current Consumption
    800 mA
  • Transistor Technology
    GaN on SiC
  • Package Type
    Flanged
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

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