MAPC-A1100

RF Amplifier by MACOM (663 more products)

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The MAPC-A1100 from MACOM is a GaN-on-SiC HEMT Amplifier that operates from DC to 3.5 GHz. It delivers a CW/pulsed output power of 65 W (48.1 dBm) with a power gain of 15.1 dB and has a drain efficiency of up to 70.5%. This internally pre-matched amplifier requires a DC supply of 28/50 V. It is available in a flanged air ceramic package and is ideal for military radio communications, RADAR, avionics, digital cellular infrastructure, RF Energy, and test instrumentation applications.

Product Specifications

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Product Details

  • Part Number
    MAPC-A1100
  • Manufacturer
    MACOM
  • Description
    65 W CW/Pulsed GaN HEMT Amplifier from DC to 3.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Avionics, RF Energy, Test & Measurement
  • Industry Application
    Military, Radar, Cellular
  • Frequency
    DC to 3.5 GHz
  • Small Signal Gain
    17.7 dB
  • Gain Flatness
    15.1 dB
  • Grade
    Commercial, Military, Space
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 us
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    28 to 50 V
  • Current Consumption
    110 mA
  • Transistor Technology
    GaN on SiC HEMT
  • Package Type
    Flanged
  • Package
    Air Cavity Ceramic Package
  • Operating Temperature
    -40°C to +85°C
  • Storage Temperature
    -65°C to +150°C
  • RoHS
    Yes

Technical Documents