MAPC-A1101

RF Amplifier by MACOM (664 more products)

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The MAPC-A1101 from MACOM is an RF Amplifier that operates from DC to 3.5 GHz. It delivers a saturated output power of 85 W with a small signal gain of 17 dB and has a drain efficiency of 68%. This amplifier is based on GaN on Silicon Carbide HEMT D-mode technology and supports both CW and pulsed operation. It has a pulse width of 100 μS with a maximum duty cycle of 10%. This amplifier requires a DC supply of 50 V.

The MAPC-A1101 is available in an air-cavity ceramic package that measures 0.380 x 0.430 x 1.132 inches and is ideal for use in military radio communications, RADAR, avionics, digital cellular infrastructure, RF energy, and test instrumentation applications.

Product Specifications

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Product Details

  • Part Number
    MAPC-A1101
  • Manufacturer
    MACOM
  • Description
    85 W CW/Pulsed GaN Amplifier from DC to 3.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Radio, Avionics, Test & Measurement, RF Energy
  • Industry Application
    Cellular, Radar, Military, Test & Measurement, Broadcast
  • Frequency
    DC to 3.5 GHz
  • Power Gain
    14 to 15.1 dB
  • Small Signal Gain
    17 dB
  • Output Power
    47.5 to 48.9 dBm
  • Output Power
    56.23 to 77.62 W
  • Grade
    Commercial, Military, Space
  • Saturated Power
    47.5 to 48.9 dBm
  • Saturated Power
    56.23 to 77.62 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 uSec
  • Duty Cycle
    10%
  • VSWR
    10.00:1
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    28 to 50 V
  • Current Consumption
    130 mA
  • Transistor Technology
    GaN HEMT
  • Package Type
    Flanged
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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