MAPC-A1102

RF Amplifier by MACOM (663 more products)

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The MAPC-A1102 from MACOM is a Power Amplifier that operates from DC to 3.5 GHz. It delivers a saturated output power of more than 150 W with a small signal gain of 16.3 dB and a drain efficiency of 65%. The amplifier is based on GaN-on-SiC HEMT D-mode technology that supports both CW and pulsed operation. It requires a DC supply voltage of 50 V and draws 260 mA of current. The amplifier is available in a surface-mount air cavity ceramic package that measures 9.65 x 10.92 x 3.35 mm and is suitable for use in military radio communications, RADAR, avionics, digital cellular infrastructure, RF energy, and test instrumentation applications. It is compatible with MACOM Power Management Bias Controller/Sequencer MABC-11040.

Product Specifications

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Product Details

  • Part Number
    MAPC-A1102
  • Manufacturer
    MACOM
  • Description
    150 W GaN Power Amplifier from DC to 3.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Avionics, Radar, RF Energy, Test & Measurement
  • Industry Application
    Aerospace & Defense, Radar, Test & Measurement, Cellular, Military
  • Frequency
    DC to 3.5 GHz
  • Power Gain
    13.8 to 14 dB
  • Small Signal Gain
    16.3 dB
  • Output Power
    51.76 dBm
  • Output Power
    149.97 W
  • Grade
    Commercial, Military
  • Saturated Power
    51.76 dBm
  • Saturated Power
    150 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 µs
  • VSWR
    10 : 1
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    50 V
  • Current Consumption
    260 mA
  • Transistor Technology
    GaN on SiC HEMT
  • Package Type
    Flanged
  • Package
    Cavity Ceramic Package
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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