MAPC-A1103

RF Amplifier by MACOM (663 more products)

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The MAPC-A1103 from MACOM is a GaN HEMT D-mode Power Amplifier that operates from DC to 2.7 GHz. It delivers a saturated output power of 270 W with a power gain of 18.4 dB and a drain efficiency of 68.2%. This PA is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process and supports the pulsed and linear operation. It requires a DC supply of 28 V/50 V. The amplifier is available in an air cavity ceramic package that measures 0.68 x 0.43 x 0.13 inches and is ideal for use in military radio, RADAR, avionics, digital cellular infrastructure, and test instrument applications.

Product Specifications

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Product Details

  • Part Number
    MAPC-A1103
  • Manufacturer
    MACOM
  • Description
    270 W Surface-Mount GaN Power Amplifier from DC to 2.7 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    RF Energy, Radio, Avionics
  • Industry Application
    Military, Broadcast, Radar, Space, Cellular, Test & Measurement
  • Frequency
    DC to 2.7 GHz
  • Power Gain
    15.3 to 16.7 dB
  • Small Signal Gain
    18.4 dB
  • Output Power
    53.5 dBm
  • Output Power
    223.87 W
  • Gain Stability
    0.013 dB/°C
  • Grade
    Commercial, Military, Space
  • Saturated Power
    53.5 dBm
  • Saturated Power
    223.8 W
  • Input Power
    36.5 dBm
  • Input Power
    4.46 W
  • Class
    Class D
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 uSec
  • Duty Cycle
    0.1
  • Sub-Category
    Pulsed Amplifier, GaN Amplifier
  • Supply Voltage
    50 V
  • Current Consumption
    430 mA
  • Transistor Technology
    GaN-on-SiC HEMT
  • Technology
    GaN
  • Package Type
    Ceramic
  • Package
    AC-650S-4
  • Dimensions
    0.68 x 0.43 x 0.132 in.
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    Drain Efficiency: 68.2 %

Technical Documents