MAPC-A1501

RF Amplifier by MACOM (664 more products)

Note : Your request will be directed to MACOM.

MAPC-A1501 Image

The MAPC-A1501 from MACOM is a GaN on SiC HEMT Amplifier that operates from 950 to 1215 MHz. It delivers a pulsed output power of 1000 W @50 V and 1300 W @65 V with a gain of over 18 dB and a drain efficiency of up to 76.1%. This D-mode amplifier supports both linear and saturated applications. It is compatible with MACOM's power management bias controller/sequencer MABC-11040. The amplifier is available in an air cavity ceramic package and is ideal for avionics, and IFF transponders applications.

Product Specifications

View similar products

Product Details

  • Part Number
    MAPC-A1501
  • Manufacturer
    MACOM
  • Description
    1300 W GaN Pulsed Amplifier from 950 to 1215 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Avionics
  • Frequency
    960 to 1215 MHz
  • Power Gain
    17 to 18.2 dB
  • Small Signal Gain
    17.2 to 18 dB
  • Output Power
    60 to 61.14 dBm
  • Output Power
    1000 to 1300.17 W
  • Grade
    Commercial
  • Saturated Power
    60 to 61.14 dBm
  • Saturated Power
    1000 to 1300 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 us
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    50 to 65 V
  • Current Consumption
    650 mA
  • Transistor Technology
    GaN on SiC HEMT
  • Package Type
    Flanged
  • Package
    Cavity Ceramic Package
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents