MAPC-A2004

RF Amplifier by MACOM (663 more products)

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The MAPC-A2004 from MACOM is a HEMT D-mode Power Amplifier that operates from 3.3 to 3.8 GHz. It delivers an output power of 90 W (~49.3 dBm) with a small signal gain of 15.1 dB and a drain efficiency of 58%. This PA is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process and supports the pulsed and linear operation. It requires a DC supply of 50 V. The amplifier is available in a surface-mount DFN package that measures 7.0 x 6.5 mm and is ideal for use in cellular base stations and digital pre-distortion error correction systems.

Product Specifications

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Product Details

  • Part Number
    MAPC-A2004
  • Manufacturer
    MACOM
  • Description
    90 W GaN-on-SiC Power Amplifier from 3.3 to 3.8 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station
  • Standards Supported
    5G
  • Industry Application
    Cellular
  • Frequency
    3.3 to 3.8 GHz
  • Gain
    15.1 dB
  • Power Gain
    11.7 to 13.7 dB
  • Small Signal Gain
    15 dB
  • Gain Flatness
    0.3 dB
  • Output Power
    49.3 dBm
  • Output Power
    85.11 W
  • Gain Stability
    0.01 dB/C
  • Grade
    Commercial
  • Saturated Power
    49.3 dBm
  • Saturated Power
    85.12 W
  • Peak Power
    49.8 dBm
  • Class
    Class D
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Pulse Width
    100 us
  • Duty Cycle
    10%
  • Input Return Loss
    -5 to -16 dB
  • Supply Voltage
    50 V
  • Transistor Technology
    HEMT
  • Technology
    GaN on SiC
  • Package Type
    Chip
  • Package
    DFN-6 Package
  • Dimensions
    7.0 x 6.5 mm
  • Operating Temperature
    -40 to 120 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    Drain Efficiency:43 to 58%

Technical Documents