WS1A2639-V1

RF Amplifier by MACOM (663 more products)

Note : Your request will be directed to MACOM.

The WS1A2639-V1 from MACOM is an Asymmetric Doherty Power Amplifier Module (PAM) that operates from 2.496 to 2.690 GHz. This amplifier is fabricated using GaN on SiC technology with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. It requires a supply voltage of up to 50 V, provides average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The amplifier provides a small signal gain of 16.5 dB and an efficiency of up to 57%. It is available in a surface-mount land grid array (LGA) package that measures 6 x 6 mm and is suitable for use in multi-standard cellular power amplifiers.

Product Specifications

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Product Details

  • Part Number
    WS1A2639-V1
  • Manufacturer
    MACOM
  • Description
    8 W GaN on SiC Power Amplifier from 2.49 to 2.69 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Display Application
    Multi-standard Cellular Power Amplifiers
  • Industry Application
    Cellular
  • Frequency
    2.496 to 2.690 GHz
  • Gain
    16.5 dB
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    48 V
  • Technology
    GaN on SiC
  • Package Type
    Surface Mount
  • Package
    Plastic LGA
  • Dimensions
    6 x 6 mm
  • RoHS
    Yes
  • Note
    Efficiency : 57 %

Technical Documents