The WSGPA01-V1 from MACOM is a GaN on SiC Discrete General-Purpose Amplifier (GPA) designed for applications up to 5 GHz. The amplifier delivers up to 10 W of output power with a small signal gain of 18 dB and a drain efficiency of better than 19%. It requires a DC Supply of 50 V for operation. The amplifier is based on a gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
This Pb-free and RoHS-compliant amplifier is available in a plastic PG-DFN package that measures 3 x 4 mm. It is designed for communication infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals and is suitable for other applications at frequencies up to 5 GHz, restricted only by its maximum operating conditions.
