APM-7098CH

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APM-7098CH Image

The APM-7098 from Marki Microwave is a Low Phase Noise LO Driver Amplifier that operates from 0.1 to 22 GHz. This amplifier provides a saturated output power of 23 dBm with a small signal gain of more than 6.5 dB and has a typical noise figure of 4.6 dB. It can handle up to 16 dBm of input power and has a phase noise of -165 dBc/Hz at 10 kHz offset from the carrier frequency.

This amplifier uses GaAs HBT technology and is optimized to provide enough power to drive the LO port of an S-diode mixer from 100 MHz to 18 GHz or of an H or L diode mixer from 100 MHz to 22 GHz. This RoHS-compliant amplifier is available as a wire bondable die or in a connectorized module with 2.92 mm female connectors. It can be operated with a variety of bias conditions for both low power and high-power applications such as mobile test and measurement equipment, radar, and satellite communication, 5G transceivers, and driver amplifier for S, H, and L-diode mixers developed by Marki Microwave.

Product Specifications

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Product Details

  • Part Number
    APM-7098CH
  • Manufacturer
    Marki Microwave
  • Description
    Low Phase Noise Amplifier from 0.1 to 22 GHz

General Parameters

  • Type
    Driver Amplifier, Low Noise Amplifier
  • Configuration
    Die
  • Standards Supported
    5G
  • Industry Application
    Radar, SATCOM, Test & Measurement
  • Frequency
    0.1 to 22 GHz
  • Small Signal Gain
    6.5 to 14 dB
  • Noise Figure
    4.6 dB
  • Output Power
    18 dBm
  • Output Power
    0.06 W
  • P1dB
    18 dBm
  • P1dB
    63.1 mW
  • Grade
    Space, Military, Commercial
  • IP3
    24 dBm
  • IP3
    251.2 mW
  • Saturated Power
    23 dBm
  • Saturated Power
    199.5 mW
  • Input Power
    16 dBm
  • Input Power
    39.8 mW
  • Impedance
    50 Ohms
  • Reverse Isolation
    38 dB
  • VSWR
    7:1
  • Input Return Loss
    19 dB
  • Output Return Loss
    13 dB
  • Phase Noise
    -165 dBc/Hz @ 10 KHz
  • Supply Voltage
    5 to 9 V
  • Current Consumption
    26 to 65 mA
  • Transistor Technology
    GaAs HBT
  • Package Type
    Chip
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    Input for Saturated Output (dBm) : 10 dBm

Technical Documents