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HG135F

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The HG135F from Microarray Technologies Corporation is a RF Amplifier with Frequency 8.5 to 10.5 GHz, Gain 25 dB, Saturated Power 40.5 dBm, Saturated Power 11.2 W, PAE 30%. Tags: Chip, Power Amplifier. More details for HG135F can be seen below.

Product Specifications

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Product Details

  • Part Number
    HG135F
  • Manufacturer
    Microarray Technologies Corporation
  • Description
    40.5 dBm, GaAs MMIC Power Amplifier from 8.5 to 10.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Frequency
    8.5 to 10.5 GHz
  • Gain
    25 dB
  • Grade
    Commercial
  • Saturated Power
    40.5 dBm
  • Saturated Power
    11.2 W
  • PAE
    30%
  • Pulsed/CW
    CW
  • Input Return Loss
    9.5 dB
  • Output Return Loss
    9.5 dB
  • Harmonics
    40%
  • Supply Voltage
    8 V
  • Current Consumption
    3000 mA
  • Technology
    GaAs pHEMT
  • Package Type
    Chip
  • Dimensions
    4.3 x 4.03 x 0.1 mm
  • Operating Temperature
    -55 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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