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HG136F-1

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The HG136F-1 from Microarray Technologies Corporation is a RF Amplifier with Frequency 6 to 18 GHz, Gain 23 dB, P1dB 33 dBm, P1dB 1.99 W, Saturated Power 35 dBm. Tags: Chip, Power Amplifier. More details for HG136F-1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    HG136F-1
  • Manufacturer
    Microarray Technologies Corporation
  • Description
    35 dBm, GaAs MMIC Power Amplifier from 6 to 18 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Frequency
    6 to 18 GHz
  • Gain
    23 dB
  • P1dB
    33 dBm
  • P1dB
    1.99 W
  • Grade
    Commercial
  • Saturated Power
    35 dBm
  • Saturated Power
    3.16 W
  • PAE
    20%
  • Pulsed/CW
    CW
  • Input Return Loss
    10 dB
  • Output Return Loss
    10 dB
  • Supply Voltage
    8 V
  • Current Consumption
    1150 mA
  • Technology
    GaAs pHEMT
  • Package Type
    Chip
  • Dimensions
    4.76 x 2.83 x 0.1 mm
  • Operating Temperature
    -55 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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