MMA052AA

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The MMA052AA from Microchip Technology is a GaAs MMIC pHEMT Self Biased Power Amplifier that operates from DC to 26 GHz. It provides a gain of 15 dB (±0.7 gain flatness) with a noise figure of 3.5 dB, has a P1dB of 26 dB and an IP3 of 35 dBm at 18 GHz. The amplifier can handle up to 24 dBm of input power and consumes 235 mA of current when operating on a 10 V supply. It is DC coupled and features RF I/O ports that are internally matched to 50 Ω. The MMA052AA amplifier is available as a die that measures 3 x 1.5 x 0.07 mm and is suitable for applications such as Test and Measurement Instrumentation, Military, Space, Wideband Microwave Radios and Microwave & mmWave Communication Systems.

Product Specifications

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Product Details

  • Part Number
    MMA052AA
  • Manufacturer
    Microchip Technology
  • Description
    GaAs MMIC pHEMT Power Amplifier from DC to 26 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Radio
  • Industry Application
    Test & Measurement
  • Frequency
    DC to 26 GHz
  • Gain
    12 to 15 dB
  • Gain Flatness
    +/- 0.5 to 0.7 dB
  • Noise Figure
    3.5 to 8 dB
  • Output Power
    22 to 27.5 dBm
  • Output Power
    0.16 to 0.56 W
  • P1dB
    22 to 27.5 dBm
  • P1dB
    0.1585 to 0.5012 W
  • Grade
    Military, Commercial
  • IP3
    35 to 39 dBm
  • IP3
    3.16 to 7.94 W
  • Input Power
    24 dBm
  • Input Power
    0.2512 W
  • Power Dissipation
    4.8 W
  • Impedance
    50 Ohms
  • Input Return Loss
    12 to 14 dB
  • Output Return Loss
    15 dB
  • Supply Voltage
    10 V (drain voltage)
  • Transistor Technology
    GaAs pHEMT
  • Package Type
    Surface Mount
  • Dimensions
    3 x 1.5 x 0.07 mm
  • Operating Temperature
    -55 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    P3DB - 28 to 29 dBm, Drain Current - 210 to 250 mA

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