The APN167 from Northrop Grumman is a GaN HEMT Power Amplifier that operates from 43 to 46 GHz. It provides a saturated output power of 39 dBm with a gain of 20 dB and has a power-added efficiency (PAE) of up to 20%. This two-stage amplifier requires a DC supply of 28 V and consumes less than 1008 mA of current. The amplifier is available as a fully-passivated die that measures 11.84 mm and is ideal for military satcom and radar applications. It has Ti/Au bond pads for conventional die attach, thermos-compression, and thermos-sonic wire bonding assembly techniques.
