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APN173

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The APN173 from Northrop Grumman is a RF Amplifier with Frequency 34 to 36 GHz, Gain 18 to 19.5 dB, Output Power 37 to 37.5 dBm, Output Power 5.01 to 5.62 W, Saturated Power 37 to 37.5 dBm. Tags: Power Amplifier. More details for APN173 can be seen below.

Product Specifications

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Product Details

  • Part Number
    APN173
  • Manufacturer
    Northrop Grumman
  • Description
    GaN HEMT Power Amplifier

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Industry Application
    Radar, Aerospace & Defense, Wireless Infrastructure
  • Frequency
    34 to 36 GHz
  • Gain
    18 to 19.5 dB
  • Output Power
    37 to 37.5 dBm
  • Output Power
    5.01 to 5.62 W
  • Saturated Power
    37 to 37.5 dBm
  • Saturated Power
    5.01 to 5.6 W
  • PAE
    24 to 25%
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    4.5 to 6 dB
  • Output Return Loss
    10 to 13 dB
  • Supply Voltage
    28 V
  • Current Consumption
    144 to 288 mA
  • Transistor Technology
    HEMT
  • Technology
    GaN

Technical Documents
View details on the manufacturer's website
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