The APN236 from Northrop Grumman is a GaN Power Amplifier that operates from 34.5 to 35.5 GHz. It delivers a saturated output power of 10 W with a linear gain of 16 dB and a PAE of 24%. This two-stage amplifier is based on a 0.2um GaN HEMT process and is designed for use in military radar systems. It requires a DC supply of 28 V and consumes less than 1 A of current. The amplifier is available as a bare die that measures 2.70 x 2.65 mm with Au-based bond pad and backside metallization and is compatible with poxy and eutectic die attach methods.
