The APN267 from Northrop Grumman is a GaN HEMT Power Amplifier that operates from 2 to 18 GHz. It provides a saturated output power of 38.2 dBm with a gain of over 11 dB and Power Added Efficiency of 33%. This amplifier requires a DC supply of 24 V and consumes 480 mA of current. It is fabricated using a GaN on SiC process and is available as a die that measures 12.32 sq. mm. This rugged and reliable amplifier is ideal for electronic warfare, radar and test applications.
