APN293

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APN293 Image

The APN293 from Northrop Grumman is a Monolithic GaN HEMT Amplifier that operates from 16 to 20.8 GHz.  It provides a saturated output power of 38.5 dBm with a gain of over 10 dB and has a PAE of more than 30%. This amplifier requires a DC supply of 20 V and consumes 256 mA of current. It is available as a die that measures 9 sq. mm and is ideal for military SATCOM, point-to-point radio, point-to-multipoint communications, terminal amplifiers, and phased-array radar applications.

Product Specifications

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Product Details

  • Part Number
    APN293
  • Manufacturer
    Northrop Grumman
  • Description
    38.5 dBm GaN HEMT Amplifier from 16 to 20.8 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    Point-to-Point, Point-to-Multipoint
  • Industry Application
    Military, SATCOM, Broadcast, Radar
  • Frequency
    16 to 20.8 GHz
  • Gain
    9 to 10 dB (Linear)
  • Output Power
    36 to 39 dBm
  • Output Power
    3.98 to 7.94 W
  • P1dB
    36 dBm
  • P1dB
    3.98 W
  • Saturated Power
    37.5 to 39 dBm
  • Saturated Power
    5.62 to 7.94 W
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    7 to 14 dB
  • Output Return Loss
    14 to 17 dB
  • Supply Voltage
    20 V
  • Current Consumption
    256 mA
  • Transistor Technology
    GaN HEMT
  • Dimensions
    3 x 3 mm

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