The APN318 from Northrop Grumman is a three-stage Power/Driver Amplifier that operates from 47.2 to 51.4 GHz. It delivers a saturated pulsed output power of 8 W (~39 dBm), a saturated CW output power of 3 W with a gain of over 12 dB. The amplifier utilizes GaN-based HEMTs and has a Power Added Efficiency of up to 11.5%. It requires a DC supply of 28 V and consumes 1.62 A of current. The amplifier is available as a die that measures 3.2 x 2.0 mm with Au-based bond pads and backside metallization. It is compatible with epoxy and eutectic die attach methods. This amplifier is ideal for 5G wireless, IoT, and SATCOM terminals applications.
