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APN319

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The APN319 from Northrop Grumman is a GaN power amplifier that operates from 47.2 to 51.4 GHz. It provides an output power of 7 W with a gain of 20 dB and Power Added Efficiency of 19%. This amplifier requires 24 V DC supply and consumes 200mA of current. It is fabricated using a GaN on SiC process and measures 2.8 x 1.4 mm (3.92 mm2). The amplifier can be used in 5G and SATCOM systems.

Product Specifications

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Product Details

  • Part Number
    APN319
  • Manufacturer
    Northrop Grumman
  • Description
    7 W GaN Power Amplifier from 47.2 to 51.4 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    Communication
  • Industry Application
    IoT, SATCOM
  • Frequency
    47.2 to 51.4 GHz
  • Gain
    16 to 20 dB
  • Output Power
    41.14 dBm
  • Output Power
    13 W
  • Grade
    Commercial, Military
  • Saturated Power
    41.14 dBm
  • Saturated Power
    13 W
  • PAE
    19 %
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    12 dB
  • Output Return Loss
    8 to 10 dB
  • Supply Voltage
    20 to 28 V
  • Current Consumption
    100 to 480 mA
  • Technology
    GaN HEMT
  • Package Type
    Chip
  • Dimensions
    2.8 x 1.4 mm
  • Operating Temperature
    -65 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Die Size - 3.92 mm^2 , 0.15 um GaN HEMT Process, 4 mil SiC substrate

Technical Documents
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