NW-PA-11B02A-TAC2

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The NuPower 11B02A-TAC2 from NuWaves RF Solutions is a Multi-Octave Solid State Power Amplifier (SSPA) that operates from 200 to 2600 MHz. It delivers a CW output power of 10 W with a small signal gain of 46 dB and an efficiency of 33%. This SSPA is based on the latest Gallium Nitride (GaN) technology that ensures high efficiency of operation, an extended range, and improved link margin. It offers a lessened load on DC power budget due to its high efficiency. The SSPA includes over-voltage protection and reverse voltage protection functions to prevent over-current related damages or damages due to reflected power. It requires a DC supply of up to 32 V and consumes 1.3 A of current.

The NuPower 11B02A-TAC2 has an integrated heatsink to easily incorporate the unit into a platform operating in harsh environment with limited space, such as a tactical vehicle or manpack. It also ensures compactness and consumes less volume on space-constrained platforms. This SSPA uses unique connectors to prevent improper installation in the field, thereby ensuring high reliability. It is available in an IP67-rated enclosure that measures 4.50 x 3.50 x 1.50 inches with TNC/N-type (female) connectors and is ideal for man-portable tactical radios, UAS Group 2 & 3, Unmanned Ground Vehicles (UGV), test labs, RF communication systems, software defined radios, and broadband RF telemetry applications.

Product Specifications

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Product Details

  • Part Number
    NW-PA-11B02A-TAC2
  • Manufacturer
    NuWaves RF Solutions
  • Description
    10 W Multi-Octave GaN Solid State Power Amplifier from 0.2 to 2.6 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    Laboratory, Software Defined Radios, Telemetry, Unmanned Aircraft Systems(UAS), Unmanned Ground Vehicles (UGV)
  • Frequency
    0.2 to 2.6 GHz
  • Small Signal Gain
    43 to 46 dB
  • Gain Flatness
    ± 4 dB
  • P1dB
    26 to 33 dBm
  • P1dB
    0.39 to 2 W
  • Grade
    Commercial, Military
  • IP3
    41 to 44 dBm
  • Saturated Power
    38.45 to 40 dBm
  • Saturated Power
    7 to 10 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • VSWR
    2.1:1
  • Sub-Category
    Multi-Octave Amplifier, GaN Amplifier
  • Switching Time
    30 us
  • Supply Voltage
    11 to 32 V
  • Transistor Technology
    GaN
  • Dimensions
    4.50 x 3.50 x 1.50 Inches
  • Input Connector
    TNC - Female
  • Output Connector
    N Type - Female
  • Weight
    20 oz
  • Cooling Options
    Integrated Heatsink
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 85 Degree C

Technical Documents